Аннотации:
Exciting a semiconductor through light absorption produces photoluminescence (PL).
In general, the emitted energy is lower than the energy absorbed. The phenomenon, first discovered
in the nineteenth century, is known as Stokes shift energy [1]. The change in energy (AS t o k e s), crucial
for the information about the phonon relaxation in the material and with importance in light emitting
devices, has not been investigated experimentally very systematically [2]. In this project, we present the
observation of the intrinsic photoluminescence Stokes shift in a semiconductor.