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Lithographically defined synthesis of transition metal dichalcogenides

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dc.contributor.author Kemelbay, Aidar
dc.contributor.author Kuntubek, Aldiyar
dc.contributor.author Chang, Nicholas
dc.contributor.author Chen, Christopher T
dc.contributor.author Kastl, Christoph
dc.contributor.author Inglezakis, Vassilis J.
dc.contributor.author Tikhonov, Alexander
dc.contributor.author Schwartzberg, Adam M
dc.contributor.author Aloni, Shaul
dc.contributor.author Kuykendall, Tevye R.
dc.date.accessioned 2020-06-01T04:16:25Z
dc.date.available 2020-06-01T04:16:25Z
dc.date.issued 2019-09-30
dc.identifier.citation Kemelbay, A., Kuntubek, A., Chang, N., Chen, C. T., Kastl, C., Inglezakis, V. J., ... & Kuykendall, T. R. (2019). Lithographically defined synthesis of transition metal dichalcogenides. 2D Materials, 6(4), 045055. en_US
dc.identifier.uri https://doi.org/10.1088/2053-1583/ab402a
dc.identifier.uri http://nur.nu.edu.kz/handle/123456789/4764
dc.description.abstract Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call 'lateral conversion', which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS2, WSe2, MoSe2 structures, and to demonstrate unique WS2/SiO2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-ShareAlike 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/us/ *
dc.title Lithographically defined synthesis of transition metal dichalcogenides en_US
dc.type Article en_US
workflow.import.source science


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