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Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

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dc.contributor.author Tynyshtykbayev, Kurbangali B.
dc.contributor.author Ainabаyev, Ardak
dc.contributor.author Kononenko, O.
dc.contributor.author Chichkov
dc.contributor.author Insepov, Z.
dc.creator Tynyshtykbayev, Kurbangali B.
dc.date.accessioned 2019-01-31T10:04:17Z
dc.date.available 2019-01-31T10:04:17Z
dc.date.issued 2019-02-28
dc.identifier DOI:10.1016/j.diamond.2018.12.012
dc.identifier.issn 09259635
dc.identifier.uri https://www.sciencedirect.com/science/article/pii/S0925963518305569
dc.identifier.uri http://nur.nu.edu.kz/handle/123456789/3715
dc.description.abstract Abstract This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching. en_US
dc.language.iso en en_US
dc.relation.ispartof Diamond and Related Materials
dc.rights Attribution-NonCommercial-ShareAlike 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/us/ *
dc.title Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms en_US
dc.type Article en_US
dc.rights.license © 2018 Elsevier B.V. All rights reserved.
elsevier.identifier.doi 10.1016/j.diamond.2018.12.012
elsevier.identifier.eid 1-s2.0-S0925963518305569
elsevier.identifier.pii S0925-9635(18)30556-9
elsevier.volume 92
elsevier.coverdate 2019-02-28
elsevier.coverdisplaydate February 2019
elsevier.startingpage 53
elsevier.endingpage 60
elsevier.openaccess 0
elsevier.openaccessarticle false
elsevier.openarchivearticle false
elsevier.teaser This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C....
elsevier.aggregationtype Journal
workflow.import.source science


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