Nanometer size hole fabrication in 2d ultrathin films with cluster ion beams

Ainabayev, A.; Kirkpatrick, S.; Walsh, M.; Vyatkin, A. F.; Insepov, Z.

dc.contributor.author	Ainabayev, A.
dc.contributor.author	Kirkpatrick, S.
dc.contributor.author	Walsh, M.
dc.contributor.author	Vyatkin, A. F.
dc.contributor.author	Insepov, Z.
dc.date.accessioned	2019-01-31T09:16:29Z
dc.date.available	2019-01-31T09:16:29Z
dc.date.issued	2017-07-24
dc.identifier.citation	Insepov, Z., Ainabayev, A., Kirkpatrick, S., Walsh, M., & Vyatkin, A. F. (2017). Nanometer size hole fabrication in 2d ultrathin films with cluster ion beams. AIP Advances, 7(7), [075014]. https://doi.org/10.1063/1.4996185	en_US
dc.identifier.issn	21583226
dc.identifier.uri	//dx.doi.org/10.1063/1.4996185
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/3713
dc.description.abstract	Gas cluster ion beams are proposed as a new tool for producing nanometer sized holes in ultrathin 2D films. Surfaces of films of graphene, graphene oxide, MoS2, and HOPG, and also silicon as a reference, were irradiated by Ar gas cluster ion beams (Exogenesis Corporation, Billerica, MA USA). The results were analyzed using atomic force microscopy (AFM) and Raman spectroscopy. Ar gas cluster ion acceleration energy was 30 keV and total ion fluences ranged from 1108 to 11013 cm-2. Uniformly distributed holes, typically in the range of 10 to 25 nanometers in diameter, produced by the cluster ions, were observed on the surface of graphene oxide. To the best of our knowledge, this is first experimental observation of such holes	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics Inc.	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.title	Nanometer size hole fabrication in 2d ultrathin films with cluster ion beams	en_US
dc.type	Article	en_US
workflow.import.source	science