Аннотация:
This work reports the preparation of a three-dimensional Si
thin film negative electrode employing a porous Cu current
collector. A previously reported copper etching procedure was
modified to develop the porous structures inside a 9 mm thick
copper foil. Magnetron sputtering was used for the deposition
of an n-type doped 400 nm thick amorphous Si thin film. Electrochemical
cycling of the prepared anode confirmed the effectiveness
of utilizing the approach. The designed Si thin film
electrode retained a capacity of around 67 mAhcm@2
(1675 mAhg@1) in 100th cycle. The improved electrochemical
performance resulted in an enhancement of both areal capacity
and capacity retention in contrast with flat and rough current
collectors that were prepared for comparison.