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| dc.contributor.author | Yu, Xiao
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| dc.contributor.author | Shen, Jie
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| dc.contributor.author | Zhang, Jie
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| dc.contributor.author | Zhong, Haowen
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| dc.contributor.author | Cui, Xiaojun
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| dc.contributor.author | Liang, Guoying
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| dc.contributor.author | Yan, Sha
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| dc.contributor.author | Zhang, Gaolong
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| dc.contributor.author | Zhang, Xiaofu
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| dc.contributor.author | Le, Xiaoyun
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| dc.date.accessioned | 2016-11-04T03:28:06Z | |
| dc.date.available | 2016-11-04T03:28:06Z | |
| dc.date.issued | 2016-07-18 | |
| dc.identifier.citation | Yu Xiao., Shen Jie., Zhang Jie., Zhong Haowen., Cui Xiaojun., Liang Guoying., Yan Sha., Zhang Gaolong., Zhang Xiaofu., Le Xiaoyun., (2016) Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam. 21st International Symposium on Heavy Ion Inertial Fusion. Book of Abstracts. http://nur.nu.edu.kz/handle/123456789/1802 | ru_RU |
| dc.identifier.uri | http://nur.nu.edu.kz/handle/123456789/1802 | |
| dc.description.abstract | The surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation... | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | 21st International Symposium on Heavy Ion Inertial Fusion. Autonomous Organization of Education “Nazarbayev University” | ru_RU |
| dc.rights | Attribution-NonCommercial-ShareAlike 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | * |
| dc.subject | study of peeling of single crystal silicon | ru_RU |
| dc.subject | ion beam | ru_RU |
| dc.subject | Research Subject Categories::NATURAL SCIENCES::Physics::Elementary particle physics | ru_RU |
| dc.title | Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam | ru_RU |
| dc.type | Abstract | ru_RU |
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