Browsing by Author "Xi, Haowen"

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Inherent photoluminescence Stokes shift in GaAs

Ullrich, Bruno; Singh, Akhilesh K.; Barik, Puspendu; Xi, Haowen; Bhowmick, Mithun (Optics letters, 2015-06-01)

The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 μm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based ...
Photoluminescence lineshape of ZnO

Ullrich, Bruno; Singh, Akhilesh K.; Bhowmick, Mithun; Barik, Puspendu; Ariza-Flores, David; Xi, Haowen; Tomm, Jens W. (American Institute of Physics, 2014)

The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley ...