GaN nanostructures for use in microelectronics

dc.contributor.author	Bolat, R.
dc.contributor.author	Alimzhanov, D.
dc.contributor.author	Sugurbekova, G.
dc.date.accessioned	2015-10-30T10:07:19Z
dc.date.available	2015-10-30T10:07:19Z
dc.date.issued	2013
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/636
dc.description.abstract	We have demonstrated possibility of replacing toxic and pyrophoric NH3, HCl by safer NH4Cl in the process of GaN synthesis. The method is flexible enough to produce thin films or bulk microrods. Good quality thin films were obtained at relatively low temperatures with high growth rate.	ru_RU
dc.language.iso	en	ru_RU
dc.publisher	Nazarbayev University	ru_RU
dc.subject	first research week	ru_RU
dc.subject	microelectronics	ru_RU
dc.subject	GaN	ru_RU
dc.title	GaN nanostructures for use in microelectronics	ru_RU
dc.type	Abstract	ru_RU